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Volumn 95, Issue 12, 2004, Pages 8275-8279
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Response of ultra-low dislocation density GaN photodetectors in the near- and vacuum-ultraviolet
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Author keywords
[No Author keywords available]
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Indexed keywords
DIAMONDS;
DISLOCATIONS (CRYSTALS);
GALLIUM NITRIDE;
IONIZATION;
NITRIDES;
QUANTUM EFFICIENCY;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR METAL BOUNDARIES;
SURFACE PROPERTIES;
VACUUM APPLICATIONS;
ABSORPTION COEFFICIENT;
DISLOCATION DENSITY;
DOPING CONTROL;
IONIZATION ENERGY;
PHOTODIODES;
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EID: 3142535280
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1748855 Document Type: Article |
Times cited : (37)
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References (10)
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