Effect of crystallographic orientation on phase transformations during indentation of silicon

Journal of Materials Research

Volumn 24, Issue 3, 2009, Pages 1172-1183

  Gerbig, Yvonne B ^a   Stranick, S J ^a   Morris, D J ^a   Vaudin, M D ^a   Cook, R F ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL RAMAN MICROSCOPIES; CONTACT PRESSURES; CRYSTALLOGRAPHIC ORIENTATIONS; PHASE TRANSFORMATIONS; RESIDUAL STRESS FIELDS; SI (1 1 1); SI(0 0 1); SI(110); SPHERICAL PROBES; STRESS PATTERNS;

INDENTATION; INTERMETALLICS; MANGANESE COMPOUNDS; PHASE TRANSITIONS; PROBES; UNLOADING;

SILICON;

EID: 63149143931     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2009.0122     Document Type: Article

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