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Volumn 86, Issue 25-26, 2006, Pages 4069-4080

Size effects in the nanoindentation of silicon at ambient temperature

Author keywords

[No Author keywords available]

Indexed keywords

INDENTATION; PLASTICITY; RELAXATION PROCESSES; SILICON WAFERS; SINGLE CRYSTALS; THERMAL EFFECTS;

EID: 33745644044     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786430600586507     Document Type: Article
Times cited : (32)

References (22)
  • 5
    • 2542417301 scopus 로고    scopus 로고
    • Y. Gogotsi and V. Domnich (Editors), Institute of Physics Publishing, Bristol
    • Y. Gogotsi and V. Domnich (Editors), High Pressure Surface Science and Engineering (Institute of Physics Publishing, Bristol, 2004).
    • (2004) High Pressure Surface Science and Engineering
  • 22
    • 33745674787 scopus 로고    scopus 로고
    • Johns Hopkins University, private communication
    • K. Hemker, Johns Hopkins University, private communication (2005).
    • (2005)
    • Hemker, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.