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Journal of Raman Spectroscopy

Volumn 30, Issue 10, 1999, Pages 939-946

Raman microspectroscopy of nanocrystalline and amorphous phases in hardness indentations

(3) Kailer, Andreas a,c Nickel, Klaus G a Gogotsi, Yury G b

a UNIVERSITY OF TÜBINGEN (Germany)

b 1120 Science and Engineering Offices (United States)

c FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANTIMONY COMPOUNDS; CERAMIC MATERIALS; DISLOCATIONS (CRYSTALS); DUCTILE FRACTURE; GALLIUM ARSENIDE; HARDNESS; NANOCRYSTALS; PHASE TRANSITIONS; QUARTZ; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; UNLOADING; WIDE BAND GAP SEMICONDUCTORS;

AMORPHIZATIONS; AMORPHOUS PHASIS; CRYSTAL FORMATION; CRYSTALS STRUCTURES; HARDNESS INDENTATION; LOCALIZED STRESS; NANOCRYSTALLINE AND AMORPHOUS; NANOCRYSTALLINE PHASIS; PHASES TRANSFORMATION; RAMAN MICROSPECTROSCOPY;

III-V SEMICONDUCTORS;

EID: 0000402404 PISSN: 03770486 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1097-4555(199910)30:10<939::AID-JRS460>3.0.CO;2-C Document Type: Article

Times cited : (170)

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