Photoluminescence analysis of Czochralski-grown lanthanum aluminate single crystals

Japanese Journal of Applied Physics

Volumn 47, Issue 10 PART 1, 2008, Pages 7980-7982

  Kanai, Kotaro ^a   Hirata, Eiji ^a   Ohki, Yoshimichi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Defect; High permittivity; High k gate dielectric; Lanthanum aluminate; Photoluminescence; Single crystal

Indexed keywords

ATOMS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); LANTHANUM; LANTHANUM ALLOYS; MULTIPHOTON PROCESSES; PERMITTIVITY; PHOTOLUMINESCENCE;

BAND GAPS; CZOCHRALSKI; HIGH PERMITTIVITY; HIGH-K GATE DIELECTRIC; LANTHANUM ALUMINATE; LOCALIZED STATE; PHOTOLUMINESCENCE ANALYSIS; PHOTOLUMINESCENCE SPECTRUM; PL EXCITATIONS; ULTRAVIOLET PHOTONS; VACUUM ULTRAVIOLET ABSORPTIONS;

SINGLE CRYSTALS;

EID: 62249192744     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7980     Document Type: Article

References (20)

1. International Technology Roadmap for Semiconductors, International Sematech (2006) [http://public.itrs.net/].
2. D. A. Muller, T. Sorsch, S. Moccio, F. H. Baumann, K. Evans-Lutterodt, and G. Timp: Nature 399 (1999) 758.
3. J. H. Stathis and D. J. DiMaria: IEDM Tech. Dig., 1998, p. 167.
4. B. Brar, G. D. Wilk, and A. C. Seabaugh: Appl. Phys. Lett. 69 (1996) 2728.
5. G. D. Wilk, R. M. Wallace, and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
6. D. A. Neumayer and E. Cartier: J. Appl. Phys. 90 (2001) 1801.
7. W. J. Zhu, T. P. Ma, T. Tamagawa, J. Kim, and Y. Di: IEEE Electron Device Lett. 23 (2002) 97.
8. T. Ito, M. Maeda, K. Nakamura, H. Kato, and Y. Ohki: J. Appl. Phys. 97 (2005) 054104.
9. M. Matsuoka, S. Isotani, J. F. D. Chubaci, S. Miyake, Y. Setsuhara, K. Ogata, and N. Kuratani: J. Appl. Phys. 88 (2000) 3773.
10. H. Kato, T. Nango, T. Miyagawa, T. Katagiri, K. S. Seol, and Y. Ohki: J. Appl. Phys. 92 (2002) 1106.
11. G. D. Wilk, R. M. Wallace, and J. M. Anthony: J. Appl. Phys. 87 (2000) 484.
12. N. Ikarashi and K. Manabe: J. Appl. Phys. 94 (2003) 480.
13. T. Ito, H. Kato, and Y. Ohki: J. Appl. Phys. 99 (2006) 094106.
14. M. Koike, T. Ino, Y. Kamimuta, M. Koyama, Y. Kamata, M. Suzuki, Y. Mitani, A. Nishiyama, and Y. Tsunashima: IEDM Tech. Dig., 2003, p. 107.
15. W. J. Zhu, T. P. Ma, S. Zafar, and T. Tamagawa: IEEE Electron Device Lett. 23 (2002) 597.
16. J. F. Conley, Jr., Y. Ono, R. Solanki, G. Stecker, and W. Zhuang: Appl. Phys. Lett. 82 (2003) 3508.
17. A. Y. Kang, P. M. Lenahan, and J. F. Conley, Jr.: Appl. Phys. Lett. 83 (2003) 3407.
18. K. Xiong, J. Robertson, and S. J. Clark: Appl. Phys. Lett. 89 (2006) 022907.
19. S. G. Lim, S. Kriventsov, T. N. Jackson, J. H. Haeni, D. G. Schlom, A. M. Balbashov, R. Uecker, P. Reiche, J. L. Freeouf, and G. Lucovsky: J. Appl. Phys. 91 (2002) 4500.
20. Y. Kawabe, A. Yamanaka, E. Hanamura, T. Kimura, Y. Takiguchi, H. Kan, and Y. Tokura: J. Appl. Phys. 88 (2000) 1175.