Formation and distribution of compounds at the Ru-Si(001) ultrathin film interface

Journal of Applied Physics

Volumn 105, Issue 4, 2009, Pages

  Pasquali, L ^a,b   Mahne, N ^b   Montecchi, M ^a,b   Mattarello, V ^c   Nannarone, S ^a,b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b LABORATORIO TASC   (Italy)

^c Media Lario Technologies   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

PHASE INTERFACES; SCHOTTKY BARRIER DIODES; SILICIDES; TRANSITION METAL COMPOUNDS; TRANSITION METALS; ULTRATHIN FILMS;

ANNEALING TEMPERATURES; CORE LEVELS; EXPERIMENTAL DATUM; FILM PROPERTIES; HIGH TEMPERATURES; INTERFACE FORMATIONS; METAL DEPOSITIONS; ROOM TEMPERATURES; SI(0 0 1); TRANSITION METAL SILICIDES; ULTRAVIOLET PHOTOEMISSIONS;

SILICON;

EID: 61449113009     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079507     Document Type: Article

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