Floating zone growth and characterization of semiconducting Ru2Si3 single crystals

Journal of Crystal Growth

Volumn 244, Issue 3-4, 2002, Pages 296-304

  Souptel, D ^a   Behr, G ^a   Ivanenko, L ^a,b   Vinzelberg, H ^a   Schumann, J ^a  

^a IFW DRESDEN   (Germany)

^b BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

A2. Floating zone technique; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

ANNEALING; COOLING; CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; HOLE MOBILITY; INCLUSIONS; IONIZATION; PHONONS; POINT DEFECTS; PRECIPITATION (CHEMICAL); RUTHENIUM COMPOUNDS; SEEBECK EFFECT; SEMICONDUCTOR MATERIALS; SILICON; SINGLE CRYSTALS;

FLOATING ZONE GROWTH;

CRYSTAL GROWTH;

EID: 0036785836     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01686-X     Document Type: Article

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