RuSi: Metal-semiconductor transition by change of structure

Journal of Alloys and Compounds

Volumn 262-263, Issue , 1997, Pages 238-242

  Buschinger, B ^a   Guth, W ^a   Weiden, M ^a   Geibel, C ^a   Steglich, F ^a   Vescoli, V ^b   Degiorgi, L ^b   Wassilew Reul, C ^c  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b ETH ZURICH   (Switzerland)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Bulk moduli; Optical properties; RuSi; Structural phase transition

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ENERGY GAP; MODIFICATION; OPTICAL PROPERTIES; PHASE TRANSITIONS; PRESSURE EFFECTS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; TRANSPORT PROPERTIES;

METAL SEMICONDUCTOR TRANSITION; PRESSURE INDUCED TRANSITION;

RUTHENIUM ALLOYS;

EID: 17744414166     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(97)00389-7     Document Type: Article

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