Growth and structural characterization of semiconducting Ru2Si3

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 461-465

  Lenssen, D ^a   Bay, H L ^a   Masters, St ^a   Dieker, C ^a   Guggi, D ^a   Carius, R ^a   Mantl, S ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Molecular beam epitaxy; Ruthenium suicide; Semiconducting silicide; Template technique

Indexed keywords

EID: 0347877386     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00148-3     Document Type: Article

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