Optical properties of semiconducting Ru2Si3

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 339-341

  Shaposhnikov, V L ^a   Ivanenko, L I ^a   Migas, D B ^a,b   Lenssen, D ^c   Carius, R ^c   Mantl, S ^c   Borisenko, V E ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b UNIVERSITY OF MILANO BICOCCA   (Italy)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Ellipsometry; Optical properties; Ru2Si3; Thin films

Indexed keywords

COMPUTATIONAL METHODS; LIGHT ABSORPTION; OSCILLATORS (ELECTRONIC); RUTHENIUM COMPOUNDS;

FULL-POTENTIAL LINEARIZED-AUGMENTED-PLANE-WAVE (FLAPW) METHOD;

SEMICONDUCTING FILMS;

EID: 0035360411     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00057-X     Document Type: Conference Paper

References (10)

1. WIEN 97, Vienna University of Technology 1997
2. 3