Interfacial layers between Si and Ru films deposited by sputtering in Ar/O2 mixture ambient

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 2 SUPPL. B, 1998, Pages

  Aoyama, Tomonori ^a   Murakoshi, Atsushi ^a   Koike, Mitsuo ^a   Takeno, Shiro ^a   Imai, Keitaro ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

(Ba, Sr)TiO3; Amorphous layer; Capacitor; Crystalline layer; Electrode; Interfacial layers; O; Ru; Si

Indexed keywords

ANNEALING; CAPACITORS; ELECTRIC RESISTANCE; FILMS; MAGNETRON SPUTTERING; RUTHENIUM; SILICON; SILVER COMPOUNDS;

SILVER DIOXIDE MIXTURE AMBIENT;

INTERFACES (MATERIALS);

EID: 0031999842     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.37.L242     Document Type: Article

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