Physical and electrical properties of sputtered Ru2Si3/Si structures

Semiconductor Science and Technology

Volumn 18, Issue 6, 2003, Pages 454-459

  Jelenkovic, Emil V ^a   Tong, K Y ^a   Cheung, W Y ^b   Wong, S P ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELLIPSOMETRY; RAMAN SPECTROSCOPY; RUTHENIUM COMPOUNDS; SEMICONDUCTING FILMS; SILICON WAFERS; SPUTTER DEPOSITION; X RAY DIFFRACTION ANALYSIS;

CO-DEPOSITION PROCESSES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037495853     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/6/311     Document Type: Article

References (20)

1. Menrion W, Rebien M, Birdwell A G, Collins S, Glosser R and Vining C B 1999 Silicides-Fundamentals and Applications ed L Miglio and F D'Huerle (Singapore: World Scientific) p 101
2. Lenssen D, Carius R, Mestres R, Guggi D, Bay H L and Mantl S 2000 Microelectron. Eng. 50 243
3. Chen Y L, Shao G, Sharpa J, Gwilliam R M, Reeson Kirkby K, Homewood K P and Goringe M J 2001 J. Mater. Sci. 36 321
4. Arita Y, Mitsuda S, Nishi Y, Matsui T and Nagasaki T 2001 J. Nucl. Mater. 294 202
5. Vining C B and Allevato C E 1991 Proc. 10th Int. Conf. Thermoelectrics ed D M Rowe p 167
6. Borisenko V E 1999 Silicides-Fundamentals and Applications ed L Miglio and F D'Huerle (Singapore: World Scientific) p 108
7. Lenssen D Carius R, Mantl S and Birdwell A G 2001 J. Appl. Phys. 90 2001
8. Peterson C S, Baglin J E E, Dempsey J J, D Huerle F M and La Placa S 1982 J. Appl. Phys. 53 4866
9. Gas P and D'Heurle F 1999 Silicides-Fundamentals and Applications ed L Miglio and F D'Huerle (Singapore: World Scientific) p 34
10. Jelenkovic E V, Tong K Y, Cheung W Y Wilson I H, Wong S P and Poon M C 2000 Thin Solid Films 368 55
11. Logan G S 1999 Handbook of Plasma Processing Technology ed S M Rossnagel, J J Cuomo and W D Westwood (Park Ridge, NJ: Noyes) p 152
12. Frampton R D, Irene E A and D'Heurle F M 1987 J. Appl. Phys. 62 2972
13. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley) p 126
14. Norde H J 1979 J. Appl. Phys. 50 5052
15. Donoval D, De Sousa Pires J, Tove P A and Harman R 1989 Solid-State Electron. 32 961
16. Finneti M, Suni I, Bartur M, Banwell T and Nicolet M A 1984 Solid-State Electron. 27 617
17. Ng C C and Yang E S 1986 IDEM Tech. Dig. 32
18. Wickenden D K, Sisson M J, Todd A G and Kelly M J 1984 Solid-State Electron. 27 515
19. Banizch R, Tillack B, Pressel K, Barth R and Erzgraber H 1997 Thin Solid Films 294 354
20. Martinet B, Romagna F, Kermarrec O, Campidelli Y, Saguin F, Baudry H, Marty M, Dutarte D and Chantre A 2002 Bipolar/BiCmos Circuits and Technology Meeting Proc. p 147