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Volumn 121, Issue 6-7, 2002, Pages 381-384
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The morphology on the surface of the GaN homo-epitaxial film grown by HVPE
a
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Author keywords
A. GaN; AFM; B. Hydride vapor phase epitaxy; C. XRD; SEM
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL DEFECTS;
GALLIUM NITRIDE;
SCANNING ELECTRON MICROSCOPY;
SUBSTRATES;
VAPOR PHASE EPITAXY;
X RAY DIFFRACTION ANALYSIS;
HYDRIDE VAPOR PHASE EPITAXY (HVPE);
SEMICONDUCTING FILMS;
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EID: 0037154669
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/S0038-1098(02)00018-2 Document Type: Article |
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Times cited : (6)
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References (11)
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