Effect of reactor geometry and growth parameters on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy

Journal of Crystal Growth

Volumn 182, Issue 3-4, 1997, Pages 233-240

  Safvi, S A ^a   Perkins, N R ^a   Horton, M N ^a   Matyi, R ^a   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; FILM GROWTH; HYDRIDES; LUMINESCENCE; NITRIDES; POLYCRYSTALLINE MATERIALS; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR PHASE EPITAXY;

CRYSTAL QUALITY; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031549990     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00375-8     Document Type: Article

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