Bulk GaN single crystal growth and characterization using various alkali metal flux

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 216-220

  Shin, T I ^a   Lee, H J ^a   Lee, J H ^b   Kim, S W ^c   Suh, S J ^a   Yoon, D H ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

^c Kumoh National Institute of Technology   (South Korea)

Author keywords

A1. Semiconducting III V materials; A2. Single crystal growth; A2. Solvent thermal method; B1. Alkali metal

Indexed keywords

ALKALI METALS; CRYSTAL GROWTH; GALLIUM NITRIDE; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SOLVENTS;

PHOTOLUMINESCENCE ANALYZER; SEMICONDUCTING III-V MATERIALS; SINGLE CRYSTAL GROWTH; SOLVENT-THERMAL METHOD;

SINGLE CRYSTALS;

EID: 33745871169     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.103     Document Type: Article

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