Characterization of bulk grown GaN and AlN single crystal materials

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 349-353

  Raghothamachar, Balaji ^a   Bai, Jie ^a   Dudley, Michael ^a   Dalmau, Rafael ^b   Zhuang, Dejin ^b   Herro, Ziad ^b   Schlesser, Raoul ^b   Sitar, Zlatko ^b   Wang, Buguo ^c   Callahan, Michael ^d   Rakes, Kelly ^d   Konkapaka, Phanikumar ^e   Spencer, Michael ^e  

^a Stony Brook University   (United States)

^b North Carolina State University   (United States)

^c SOLID STATE SCIENTIFIC CORPORATION   (United States)

^d AIR FORCE RESEARCH LABORATORY   (United States)

^e Cornell University   (United States)

Author keywords

A1. Defects; A1. High resolution X ray diffraction; A1. X ray topography; A2. Single crystal growth; B1. Aluminum nitride; B1. Gallium nitride

Indexed keywords

ALUMINUM NITRIDE; DEFECTS; GALLIUM NITRIDE; OPTICAL RESOLVING POWER; SAPPHIRE; SUBLIMATION; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X-RAY DIFFRACTION; SINGLE CRYSTAL GROWTH; X-RAY TOPOGRAPHY;

SINGLE CRYSTALS;

EID: 30444438195     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.11.042     Document Type: Conference Paper

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