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Journal of Applied Physics

Volumn 105, Issue 3, 2009, Pages

Accumulation of fluorine in C F4 plasma-treated AlGaNGaN heterostructure interface: An experimental investigation

(2) Basu, Anirban a Adesida, Ilesanmi a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON GAS; FLUORINE; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; HETEROJUNCTIONS; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; MAGNETIC FIELD EFFECTS; MASS SPECTROMETRY; PLASMA APPLICATIONS; PLASMAS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SECONDARY ION MASS SPECTROMETRY; TRANSPORT PROPERTIES;

ALGAN GAN; EXPERIMENTAL INVESTIGATIONS; HALL MEASUREMENTS; HETEROSTRUCTURE; HETEROSTRUCTURE INTERFACES; PLASMA TREATMENTS; POST-ANNEALING; SECONDARY IONS; THERMAL-ANNEALING; TWO DIMENSIONAL ELECTRONS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 60449117932 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3074514 Document Type: Article

Times cited : (18)

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