SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 A, 2005, Pages 1722-1725

Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

(8) Park, Chan Jin a Park, Young Shin a Lee, Ho Sang a Yoon, Im Taek a Kang, Tae Won a Cho, Hoon Young a Oh, Jae Eung b Wang, Kang L c

a Dongguk University (South Korea)

b Hanyang University (South Korea)

c UNIVERSITY OF CALIFORNIA (United States)

Author keywords

Aluminum compounds; Capacitance voltage characteristics; Deep level transient spectroscopy; Deep levels; Defect states; Gallium compounds; Molecular beam epitaxial growth; Wide band gap semiconductors

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA APPLICATIONS; REACTION KINETICS; SEMICONDUCTING ALUMINUM COMPOUNDS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; DEEP-LEVELS; DEFECT STATES; WIDE-BAND-GAP SEMICONDUCTORS;

HETEROJUNCTIONS;

EID: 21244439112 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.1722 Document Type: Article

Times cited : (3)

References (18)

1
- 0347768415
- S. Keller, R. Vetury, G. Parish, S. P. DenBaars and U. K. Mishra: Appl. Phys. Lett. 78 (2001) 3088.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3088
- Keller, S.¹ Vetury, R.² Parish, G.³ DenBaars, S.P.⁴ Mishra, U.K.⁵

2
- 21544459054
- M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, M. S. Shur and H. Park: Appl. Phys. Lett. 68 (1996) 514.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 514
- Asif Khan, M.¹ Chen, Q.² Sun, C.J.³ Yang, J.W.⁴ Shur, M.S.⁵ Park, H.⁶

3
- 79956038745
- K. B. Kam, J. Li, M. L. Nakarmi, J. Y. Lin and H. X. Jiang: Appl. Phys. Lett. 81 (2002) 1809.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1809
- Kam, K.B.¹ Li, J.² Nakarmi, M.L.³ Lin, J.Y.⁴ Jiang, H.X.⁵

4
- 0000912096
- B. Shen, T. Someya, O. Moriwaki and Y. Arakawa: Appl. Phys. Lett. 76 (2000) 679.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 679
- Shen, B.¹ Someya, T.² Moriwaki, O.³ Arakawa, Y.⁴

5
- 0032614607
- J. Han et al.: Appl. Phys. Lett. 74 (1999) 2702.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2702
- Han, J.¹

6
- 0033221284
- L. F. Eastman: Phys. Status Solidi A 176 (1999) 175.
- (1999) Phys. Status Solidi A , vol.176 , pp. 175
- Eastman, L.F.¹

7
- 0035279403
- S. T. Bradley, A. P. Young, L. J. Brillson, M. J. Murphy, W. J. Schaff and L. F. Eastman: IEEE Trans. Electron Devices. 48 (2001) 412.
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 412
- Bradley, S.T.¹ Young, A.P.² Brillson, L.J.³ Murphy, M.J.⁴ Schaff, W.J.⁵ Eastman, L.F.⁶

8
- 0001422563
- C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. E. Botchkarev and H. Morkoc: Appl. Phys. Lett. 72 (1998) 1211.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1211
- Wang, C.D.¹ Yu, L.S.² Lau, S.S.³ Yu, E.T.⁴ Kim, W.⁵ Botchkarev, A.E.⁶ Morkoc, H.⁷

9
- 0001422561
- Z.-Q. Fang, D. C. Look, W. Kim, Z. Fan, A. Botchkarev and H. Morkoc: Appl. Phys. Lett. 72 (1998) 2277.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2277
- Fang, Z.-Q.¹ Look, D.C.² Kim, W.³ Fan, Z.⁴ Botchkarev, A.⁵ Morkoc, H.⁶

10
- 0346449481
- W. Götz, N. M. Johnson, M. D. Bremser and R. F. Davis: Appl. Phys. Lett. 69 (1996) 2379.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2379
- Götz, W.¹ Johnson, N.M.² Bremser, M.D.³ Davis, R.F.⁴

11
- 0037392601
- A. Y. Polenta, N. B. Smirnov, A. V. Govorkov, M. G. Mil'vidskii, S. J. Pearton, A. S. Usikov, N. M. Shmidt, A. V. Osinsky, W. V. Lundin, E. E. Zavarin and A. I. Besulkin: Solid-state Electron. 47 (2003) 671.
- (2003) Solid-state Electron. , vol.47 , pp. 671
- Polenta, A.Y.¹ Smirnov, N.B.² Govorkov, A.V.³ Mil'vidskii, M.G.⁴ Pearton, S.J.⁵ Usikov, A.S.⁶ Shmidt, N.M.⁷ Osinsky, A.V.⁸ Lundin, W.V.⁹ Zavarin, E.E.¹⁰ Besulkin, A.I.¹¹

12
- 0042341660
- Y. S. Park, H. S. Lee, J. H. Na, H. J. Kim, S. M. Si, H. M. Kim, T. W. Kang and J. E. Oh: J. Appl. Phys. 94 (2003) 800.
- (2003) J. Appl. Phys. , vol.94 , pp. 800
- Park, Y.S.¹ Lee, H.S.² Na, J.H.³ Kim, H.J.⁴ Si, S.M.⁵ Kim, H.M.⁶ Kang, T.W.⁷ Oh, J.E.⁸

13
- 27844583800
- L. Vegard: Z. Phys. 5 (1921) 17.
- (1921) Z. Phys. , vol.5 , pp. 17
- Vegard, L.¹

14
- 0032065032
- A. Y. Polenta, N. B. Smirnov, A. V. Govorkov and J. M. Redwing: Solid-state Electron. 42 (1998) 831.
- (1998) Solid-state Electron. , vol.42 , pp. 831
- Polenta, A.Y.¹ Smirnov, N.B.² Govorkov, A.V.³ Redwing, J.M.⁴

15
- 0042387256
- A. Mircea, A. Mitonneau, J. Hallais and M. Jaros: Phys. Rev. B 16 (1977) 3665.
- (1977) Phys. Rev. B , vol.16 , pp. 3665
- Mircea, A.¹ Mitonneau, A.² Hallais, J.³ Jaros, M.⁴

16
- 0040153542
- P. Omling, E. R. Weber, L. Montelius, H. Alexander and J. Michel: Phys. Rev. 632 (1985) 6571.
- (1985) Phys. Rev. , vol.632 , pp. 6571
- Omling, P.¹ Weber, E.R.² Montelius, L.³ Alexander, H.⁴ Michel, J.⁵

17
- 0000508507
- Z.-Q. Fang, J. W. Hemsky and D. C. Look: Appl. Phys. Lett. 72 (1998) 448.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 448
- Fang, Z.-Q.¹ Hemsky, J.W.² Look, D.C.³

18
- 0035831817
- Z.-Q. Fang, D. C. Look, P. Visconti, D.-F. Wang, C.-Z. Lu, H. Morkoc, S. S. Park and K. Y. Lee: Appl. Phys. Lett. 78 (2001) 2178.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 2178
- Fang, Z.-Q.¹ Look, D.C.² Visconti, P.³ Wang, D.-F.⁴ Lu, C.-Z.⁵ Morkoc, H.⁶ Park, S.S.⁷ Lee, K.Y.⁸

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.