Fluorine diffusion and accumulation in Si step-doped InAlAs layers

Applied Physics Letters

Volumn 73, Issue 17, 1998, Pages 2459-2461

  Wakejima, A ^a   Onda, K ^a   Fujihara, A ^a   Mizuki, E ^a   Kanamori, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005872917     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122481     Document Type: Article

References (7)

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