Fluorine plasma ion implantation in AlGaNGaN heterostructures: A molecular dynamics simulation study

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Yuan, L ^a   Wang, M J ^a   Chen, K J ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; EPITAXIAL FILMS; HETEROJUNCTIONS; ION IMPLANTATION; OPTIMIZATION;

EPITAXIAL STRUCTURES; POTENTIAL FUNCTIONS;

PLASMAS;

EID: 40849105175     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2896646     Document Type: Article

References (14)

1. Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2006.881054 53, 2207 (2006).
2. Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2005.881002 53, 2223 (2006).
3. R. Wang, Y. Cai, W. Tang, K. M. Lau, and K. J. Chen, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.878070 27, 632 (2006).
4. R. Wang, Y. Cai, C.-W. Tang, K. M. Lau, and K. J. Chen, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2006.882522 27, 793 (2006).
5. Y. Cai, Z. Cheng, Z. Yang, W. C.-W. Tang, K. M. Lau, and K. J. Chen, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2007.895391 28, 328 (2007).
6. C. Yi, R. Wang, W. Huang, W. C.-W. Tang, K. M. Lau, and K. J. Chen, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2007, 389.
7. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
8. J. Lindhard and A. H. Sorensen, Phys. Rev. A PLRAAN 1050-2947 10.1103/PhysRevA.53.2443 53, 2443 (1996).
9. L. Yuan, M. Yu, W. Li, H. Ji, L. Ren, K. Zhan, R. Huang, X. Zhang, Y. Wang, J. Zhang, and H. OKA Nucl. Instrum. Methods Phys. Res. B NIMBEU 0168-583X 10.1016/j.nimb.2006.08.003 251, 390 (2006).
10. T. Aoki, J. Matsuo, and G. Takaoka, Proceedings of the 14th International Conference on Ion Implantation Technology, 2002 (unpublished), p. 560.
11. K. Nordlund, Comput. Mater. Sci. CMMSEM 0927-0256 10.1016/0927-0256(94) 00085-Q 3, 448 (1995).
12. S. Segawa, M. Kurihara, N. Nakano, and T. Makabe, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 10.1143/JJAP.38.4416 38, 4416 (1999).
13. P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden, D. D. Koleske, and R. L. Henry, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1381570 79, 21 (2001).
14. A. Basu, V. Kumar, and I. Adesida, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2789444 24, 2607 (2007).