Effect of growth termination conditions on the performance of AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 78, Issue 20, 2001, Pages 3088-3090

  Keller, S ^a   Vetury, R ^a   Parish, G ^a   DenBaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347768415     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1372620     Document Type: Article

References (16)

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