Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

Solar Energy Materials and Solar Cells

Volumn 91, Issue 2-3, 2007, Pages 195-200

  Darwiche, S ^a   Nikravech, M ^a   Morvan, D ^a   Amouroux, J ^a   Ballutaud, D ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b Lab de Physique des Solides de   (France)

Author keywords

Electrochemical impedance spectroscopy; Hydrogen; Minority carrier diffusion length; Multicrystalline silicon; SIMS

Indexed keywords

DEUTERIUM; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; PASSIVATION; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SPECTROSCOPY;

ELECTRON BEAM INDUCED CURRENT (EBIC); MINORITY CARRIER DIFFUSION LENGTH; MULTICRYSTALLINE SILICON;

SILICON;

EID: 33750698999     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.08.008     Document Type: Article

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