Analysis of oxygen incorporation in unidirectionally solidified multicrystalline silicon for solar cells

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 2204-2208

  Matsuo, Hitoshi ^a   Bairava Ganesh, R ^a,b   Nakano, Satoshi ^c   Liu, Lijun ^c   Arafune, Koji ^d   Ohshita, Yoshio ^d   Yamaguchi, Masafumi ^d   Kakimoto, Koichi ^a,c  

^a KYUSHU UNIVERSITY   (Japan)

^b ANNA UNIVERSITY   (India)

^c KYUSHU UNIVERSITY   (Japan)

^d TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

A1. Directional solidification; A1. Impurities; B2. Semiconducting silicon; B3. Solar cells

Indexed keywords

CRYSTAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR OXYGEN; NUMERICAL METHODS; SOLAR CELLS; SOLIDIFICATION;

MULTICRYSTALLINE SILICONS; OXYGEN CONCENTRATION; OXYGEN TRANSFER;

CRYSTALLINE MATERIALS;

EID: 41449090571     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.017     Document Type: Article

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