Hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 64-68

  Ulyashin, A G ^a   Ivanov, A I ^a   Job, R ^b   Fahrner, W R ^b   Frantskevich, A V ^c   Komarov, F F ^c   Kamyshan, A C ^c  

^a BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^b UNIVERSITY OF HAGEN   (Germany)

^c BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; HELIUM; HYDROGEN; ION IMPLANTATION; MOLECULES; PLASMAS; SECONDARY ION MASS SPECTROMETRY;

HYDROGEN ACCUMULATION; THERMAL DONORS;

SILICON WAFERS;

EID: 0033905553     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00435-3     Document Type: Article

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