Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon

Solar Energy Materials and Solar Cells

Volumn 74, Issue 1-4, 2002, Pages 57-63

  Hahn, Giso ^a   Geiger, Patric ^a   Sontag, Detlef ^a   Fath, Peter ^a   Bucher, Ernst ^a  

^a UNIVERSITY OF KONSTANZ   (Germany)

Author keywords

Diffusion length; EFG; Hydrogen; Lifetime; Majority carrier; Minority carrier; Mobility; Multicrystalline; RGS; Ribbon; Silicon; String ribbon

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; HALL EFFECT; HYDROGEN; HYDROGENATION; PASSIVATION; SILICON NITRIDE;

SILICON RIBBONS;

SILICON SOLAR CELLS;

EID: 0036777227     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00048-X     Document Type: Article

References (12)

1. Edge stabilized ribbon (ESR) growth of silicon for low cost photovoltaics
2. Ribbon growth on substrate (RGS)-a new approach to high speed growth of silicon ribbons for photovoltaics
3. Detailed study on microwave induced remote hydrogen plasma passivation of multicrystalline silicon
4. Improvement of mc Si solar cells by Al-gettering and hydrogen passivation
5. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape
6. Hall mobility minimum of temperature dependence in polycrystalline silicon
7. Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decay
8. Hydrogen passivation of ribbon silicon - Electronic properties and solar cell results
9. Numerical modeling of textured silicon solar cells using PC1D
10. 2 on small grain ribbon growth on substrate (RGS) silicon
11. Two dimensional resolution of minority carrier diffusion constants in different silicon materials