Si-implantation activation annealing of GaN up to 1400°C

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 179-184

  Zolper, J C ^a   Han, J ^b   Biefeld, R M ^b   Van Deusen, S B ^b   Wampler, W R ^b   Reiger, D J ^b   Pearton, S J ^c   Williams, J S ^d   Tan, H H ^d   Karlicek Jr , R F ^e   Stall, R A ^e  

^a OFFICE OF NAVAL RESEARCH   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c University of Florida   (United States)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e EMCORE CORPORATION   (United States)

Author keywords

AlN; Annealing; GaN; Ion implanation

Indexed keywords

EID: 0005307084     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0383-x     Document Type: Article

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