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Solid State Communications

Volumn 133, Issue 4, 2005, Pages 213-217

Optical study of implantation damage recovery from Si-implanted GaN

(4) Fellows, James A a Yeo, Y K a Ryu, Mee Yi b Hengehold, R L a

a Air Force Institute of Technology (United States)

b UNIVERSITY OF DAYTON RESEARCH INSTITUTE (United States)

Author keywords

A. Semiconductors; D. Optical properties; E. Luminescence

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; GALLIUM NITRIDE; ION IMPLANTATION; LIGHT EMITTING DIODES; LUMINESCENCE; MORPHOLOGY; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION;

ANNEALING TEMPERATURES; ELECTRICAL ACTIVATION; ION DOSE; SAPPHIRE SUBSTRATES;

SILICON;

EID: 10844250897 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2004.11.009 Document Type: Article

Times cited : (9)

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