Properties of annealed AlN films deposited by pulsed laser deposition

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 262-267

  Jones, K A ^a   Derenge, M A ^a   Zheleva, T S ^a   Kirchner, K W ^a   Ervin, M H ^a   Wood, M C ^a   Vispute, R D ^b   Sharma, R P ^b   Venkatesan, T ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; FILM GROWTH; INTERFACES (MATERIALS); PULSED LASER APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

POISSON COMPRESSIONS; PULSED LASER DEPOSITIONS;

SEMICONDUCTING FILMS;

EID: 0033901220     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0060-1     Document Type: Article

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