Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing

Applied Physics Letters

Volumn 85, Issue 22, 2004, Pages 5254-5256

  Yu, Haijiang ^a   McCarthy, L ^a   Xing, H ^a   Waltereit, H ^a   Shen, L ^a   Keller, S ^a   Denbaars, S P ^a   Speck, J S ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT ACTIVATION; DOPANT CONCENTRATION; PRESSURE CHAMBERS; SHEET RESISTANCE;

ACTIVATION ENERGY; ANNEALING; DOPING (ADDITIVES); ELECTRIC RESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

GALLIUM NITRIDE;

EID: 11044224779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1828237     Document Type: Article

References (7)

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