Electrical activation studies of GaN implanted with Si from low to high dose

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1930-1932

  Fellows, James A ^a   Yeo, Y K ^a   Hengehold, R L ^a   Johnstone, D K ^b  

^a AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^b AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION EFFICIENCY; ALN; ANNEAL TEMPERATURES; ELECTRICAL ACTIVATION; ELECTRICAL ACTIVATION EFFICIENCY; HIGH DOSE; ION DOSE; LOW DOSE; LOW-TO-HIGH; NITROGEN ENVIRONMENT; ROOM TEMPERATURE;

GALLIUM NITRIDE; SAPPHIRE;

EFFICIENCY;

EID: 79956021605     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1458694     Document Type: Article

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