Activation kinetics of implanted Si+ in GaN and application to fabricating lateral Schottky diodes

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 4987-4989

  Irokawa, Y ^a   Kim, Jihyun ^b   Ren, F ^b   Baik, K H ^b   Gila, B P ^b   Abernathy, C R ^b   Pearton, S J ^b   Pan, C C ^c   Chen, G T ^c   Chyi, J I ^c  

^a Rd Management Section   (Japan)

^b University of Florida   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; MOSFET DEVICES; POSITIVE IONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE;

ACTIVATION KINETICS; FORWARD IDEALITY FACTORS; LATERAL SCHOTTKY DIODES; REVERSE BREAKDOWN VOLTAGE; TEMPERATURE COEFFICIENT;

ION IMPLANTATION;

EID: 0345872405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1634382     Document Type: Article

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