Impact of sub-melt laser annealing on Si1-x-Gex source /drain defectivity

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007

Volumn , Issue , 2007, Pages 307-315

  Rosseel, E ^a   Lu, J P ^b   Hikavyy, A ^a   Verheyen, P ^a   Hoffmann, T ^a   Richard, O ^a   Geypen, J ^a   Bender, H ^a   Loo, R ^a   Absil, P ^a   McIntosh, R ^c   Felch, S B ^c   Schreutelkamp, R ^d  

^a IMEC   (Belgium)

^b TEXAS INSTRUMENTS   (Belgium)

^c APPLIED MATERIALS INC   (United States)

^d Applied Materials Belgium   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; DEFECT DENSITY; ELECTRIC CONDUCTIVITY; GERMANIUM; INTERNET PROTOCOLS; LASERS; LEAKAGE (FLUID); RAPID THERMAL ANNEALING; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SILICON;

DEFECTIVITY; DIFFERENT PROCESSES; DWELL TIMES; GE CONCENTRATIONS; JUNCTION LEAKAGES; LASER ANNEAL; LASER ANNEALING; LAYER CHARACTERIZATIONS; PEAK TEMPERATURES; SI SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 47949131691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2007.4383859     Document Type: Conference Paper

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