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Volumn 22-27-September-2002, Issue , 2002, Pages 544-547

Effect of microwave radiation on boron activation

Author keywords

Boron; Chemical processes; Implants; Impurities; Kinetic theory; Lighting; Rapid thermal annealing; Rapid thermal processing; Silicon; Ultraviolet sources

Indexed keywords

CHEMICAL ACTIVATION; DENTAL PROSTHESES; DIFFUSION; FLUORINE; HEAT TREATMENT; IMPURITIES; ION IMPLANTATION; KINETIC THEORY; LIGHTING; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON;

EID: 59649095600     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IIT.2002.1258062     Document Type: Conference Paper
Times cited : (5)

References (7)
  • 1
    • 0012006371 scopus 로고    scopus 로고
    • State of the art techniques for ultra-shallow junction formation
    • of Proceedings of the 199th meeting of the Electrochemical Society, Washington DC. 25 March
    • W. Lerch, B. Bayha, D.F. Downey, E.A. Arevalo, "State of the art techniques for Ultra-Shallow Junction Formation," in Rapid Thermal and Other Short-Time Processing Technologies II, p. 321 of Proceedings of the 199th meeting of the Electrochemical Society, Washington DC. (25 March 2001)
    • (2001) Rapid Thermal and Other Short-Time Processing Technologies II , pp. 321
    • Lerch, W.1    Bayha, B.2    Downey, D.F.3    Arevalo, E.A.4
  • 6
    • 0001633650 scopus 로고    scopus 로고
    • Effect of fluorine on the diffusion of boron in ion implanted si
    • 31 August
    • D.F. Downey, J.W. Chow, E. Ishida, K. S. Jones, "Effect of Fluorine on the Diffusion of Boron in Ion Implanted Si," Applied Physics Letters, V. 73, p. 1263-5. (31 August 1998)
    • (1998) Applied Physics Letters , vol.73 , pp. 1263-1265
    • Downey, D.F.1    Chow, J.W.2    Ishida, E.3    Jones, K.S.4
  • 7
    • 0032595846 scopus 로고    scopus 로고
    • Anomalous B penetration through ultra thin gate oxide during rapid thermal annealing
    • Sept
    • R.B. Fair, "Anomalous B Penetration Through Ultra thin Gate Oxide During Rapid Thermal Annealing," IEEE Electron Device Letters, p. 466-468. (Sept. 1999)
    • (1999) IEEE Electron Device Letters , pp. 466-468
    • Fair, R.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.