SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 125-130

Surfactant-grown low-doped germanium layers on silicon with high electron mobilities

(4) Hofmann, K R a Reinking, D a Kammler, M a Horn von Hoegen, M a

a LEIBNIZ UNIVERSITY HANNOVER (Germany)

Author keywords

Doping; Ge; Hall mobility; Heteroepitaxy; Molecular beam epitaxy; Sb; Si(111); SiGe; Surfactant

Indexed keywords

CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ACTIVE AGENTS; THERMAL EFFECTS;

SOLID SOURCE MOLECULAR BEAM EPITAXY GROWTH;

SEMICONDUCTING SILICON;

EID: 0032066571 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(98)00460-X Document Type: Article

Times cited : (20)

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