Microwave annealing for ultra-shallow junction formation

Journal of Electronic Materials

Volumn 31, Issue 3, 2002, Pages 214-219

  Kohli, P ^a   Ganguly, S ^a   Kirichenko, T ^a   Li, H J ^a   Banerjee, S ^a   Graetz, E ^b   Shevelev, M ^c  

^a The University of Texas at Austin   (United States)

^b SEMATECH   (United States)

^c Gyrotron Technology Inc   (United States)

Author keywords

Cyclotron; Microwave annealing; Solid solubility; Ultrashallow junctions

Indexed keywords

CYCLOTRON RESONANCE; ELECTRIC RESISTANCE; GYROTRONS; ION IMPLANTATION; LEAKAGE CURRENTS; MASERS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

ACTIVATION LEVELS; CYCLOTRON RESONANCE MASER; DOPANT PROFILE; ELECTROMAGNETIC FIELD AIDED ACTIVATION; IMPURITY PROFILE; MICROWAVE ANNEALING; SOLID SOLUBILITY; SOURCE DRAIN JUNCTIONS; TRANSIENT ENHANCED DIFFUSION; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTING BORON;

EID: 0036502188     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0209-1     Document Type: Article

References (8)