Fabrication of laser-annealed poly-TFT by forming a Si1-xGex thermal barrier

IEEE Electron Device Letters

Volumn 22, Issue 3, 2001, Pages 121-123

  Choe, Seong Min ^a,b   Ahn, Jeong Ah ^b   Kim, Ohyun ^a,b  

^a Pohang University of Science and Technology ^*

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Alloy; Excimer laser annealing (ELA); Thin film transistor (TFT)

Indexed keywords

ANNEALING; EXCIMER LASERS; GERMANIUM ALLOYS; ION IMPLANTATION; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SOLIDIFICATION; THERMAL BARRIER COATINGS; THERMAL CONDUCTIVITY;

EXCIMER LASER ANNEALING; LASER ENERGY; THERMAL EXTRACTION;

THIN FILM TRANSISTORS;

EID: 0035280101     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.910615     Document Type: Article

References (17)

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