|
|
Volumn , Issue , 2007, Pages 51-56
|
|
Microwave annealing for low temperature activation of As in Si
|
|
Author keywords
[No Author keywords available]
|
|
Indexed keywords
CONVECTION AND CONDUCTIONS;
CONVENTIONAL PROCESSING;
DOPED SILICONS;
HIGH TEMPERATURES;
LOW TEMPERATURES;
MICROWAVE ANNEALING;
MICROWAVE FIELDS;
MICROWAVE PROCESSING;
PROCESSING CONDITIONS;
SEMI-CONDUCTORS;
SEMICONDUCTOR SUBSTRATES;
SOME APPLICATIONS;
ANNEALING;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
INTERNET PROTOCOLS;
MICROWAVE HEATING;
MICROWAVES;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DEVICE MODELS;
SEMICONDUCTOR MATERIALS;
RAPID THERMAL ANNEALING;
|
|
EID: 47949127312
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/RTP.2007.4383818 Document Type: Conference Paper |
|
Times cited : (13)
|
|
References (5)
|
