Millisecond anneal and short-channel effect control in Si CMOS transistor performance

IEEE Electron Device Letters

Volumn 27, Issue 12, 2006, Pages 969-971

  Nieh, C F ^a,b   Ku, K C ^b   Chen, C H ^b   Chang, H ^b   Wang, L T ^b   Huang, L P ^b   Sheu, Y M ^b   Wang, C C ^b   Lee, T L ^b   Chen, S C ^b   Liang, M S ^b   Gong, J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Annealing; Short channel effect (SCE); Ultrashallow junction (USJ)

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SOLUBILITY; THRESHOLD VOLTAGE;

ANNEALING SEQUENCE; CRYSTALLINE SILICON; SHORT-CHANNEL EFFECT (SCE); ULTRASHALLOW JUNCTION (USJ);

CMOS INTEGRATED CIRCUITS;

EID: 33947201050     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.886317     Document Type: Article

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