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Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

Suppression of defect states in HfSiON gate dielectric films on n -type Ge(100) substrates

(4) Chung, K B a Seo, H a Long, J P a Lucovsky, G a

a NORTH CAROLINA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; DIELECTRIC FILMS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; HAND HELD COMPUTERS; PERSONAL DIGITAL ASSISTANTS; POLARIZATION; SEMICONDUCTOR DOPING; SPECTROSCOPIC ELLIPSOMETRY; SPONTANEOUS EMISSION; STABILITY; X RAY SPECTROSCOPY;

BAND EDGES; COMPOSITIONAL CHANGES; CONDUCTION BAND EDGES; DEFECT STATES; GE DIFFUSIONS; GE(100); HFSION FILMS; HFSION GATE DIELECTRICS; MEDIUM ENERGIES; POSTDEPOSITION ANNEALING; STRUCTURAL STABILITIES;

ABSORPTION SPECTROSCOPY;

EID: 55849136916 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3005422 Document Type: Article

Times cited : (17)

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