Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films

Applied Physics Letters

Volumn 92, Issue 2, 2008, Pages

  Chung, K B ^a,d   Cho, M H ^a   Hwang, U ^b   Kang, H J ^b   Suh, D C ^a   Sohn, H C ^a   Ko, D H ^a   Kim, S H ^c   Jeon, H T ^c  

^a Yonsei University   (South Korea)

^b Chungbuk National University   (South Korea)

^c Hanyang University   (South Korea)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISSOCIATION; ENERGY GAP; NITRIDATION;

CHEMICAL STATES; DIRECT PLASMA NITRIDATION; POSTNITRIDATION ANNEALING; VALENCE BAND OFFSETS;

SILICATE MINERALS;

EID: 38349138529     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2826271     Document Type: Article

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