Effect of process parameters on friction force and material removal in oxide chemical mechanical polishing

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8771-8778

  Park, Boumyoung ^a   Lee, Hyunseop ^a   Kim, Youngjin ^a   Kim, Hyoungjae ^b   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

Author keywords

Abrasive concentration; CMP; Contact angle; Friction force; Hydrated layer; Pad surface roughness; Removal rate; SiO2 surface hardness; Slurry pH; Uniformity

Indexed keywords

ABRASIVES; ALKALINITY; CHEMICAL MECHANICAL POLISHING; CHEMICAL POLISHING; CONTACT ANGLE; FRICTION; HARDNESS; HYDRATES; HYDRATION; NANOTECHNOLOGY; PH; POLISHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SILICON WAFERS; SLURRIES; SURFACE PROPERTIES; SURFACE ROUGHNESS; TRIBOLOGY; VELOCITY;

ABRASIVE CONCENTRATION; CMP; FRICTION FORCE; HYDRATED LAYER; PAD SURFACE ROUGHNESS; REMOVAL RATE; SIO2 SURFACE HARDNESS; SLURRY PH; UNIFORMITY;

SURFACES;

EID: 59349114969     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8771     Document Type: Article

References (32)

1. A. Ishikawa, Y. Shishida, T. Yamanishi, N. Hata, T. Nakayama, N. Fujii, H. Tanaka, H. Matsuo, and K. Kinoshita: J. Electrochem. Soc. 153 (2006) G692.
2. Y. Ahn, J. Y. Yoon, C. W. Baek, and Y. K. Kim: Wear 257 (2004) 785.
3. D. S. Lim, J. W. Ahn, H. S. Park, and J. H. Shin: Surf. Coat. Technol. 200 (2005) 1751.
4. H. Liang: Tribology Int. 38 (2005) 235.
5. J. Sorooshian, A. Philipossian, D. J. Sten, R. P. Timon, and D. L. Hetherington: Jpn. J. Appl. Phys. 44 (2005) 1219.
6. S. Y. Kim, C. J. Park, and Y. J. Seo: Microelectron. Eng. 66 (2003) 472.
7. H. Jeong, H. Kim, S. Lee, and D. Domfeld: CIRP Ann. Manuf. Technol. 55 (2006) 325.
8. D. E. Lee, I. Hwang, C. M. O. Valente, J. F. G. Oliveira, and D. A. Domfeld: Int. J. Mach. Tools Manuf. 46 (2006) 176.
9. A. Philipossian and S. Olsen: Jpn. J. Appl. Phys. 42 (2003) 6371.
10. H. Liang and G. Zu: Scr. Mater. 46 (2002) 343.
11. J. Bai, Y. W. Zhao, and Y. G. Wang: Appl. Surf. Sci. 253 (2007) 8489.
12. S. Runnels and L. Eyman: J. Electrochem. Soc. 141 (1994) 1698.
13. W. Tseng, J. Chin, and L. Kang: J. Electrochem. Soc. 146 (1999) 1952.
14. W. Li, D. W. Shin, M. Tomozawa, and S. Murarka: Thin Solid Films 270 (1995) 601.
15. N. H. Kim, Y. J. Seo, and W. S. Lee: Microelectron. Eng. 83 (2006) 362.
16. M. Tomozawa: Solid State Technol. (1997) 169.
17. J. MaGrath and C. Davis: J. Mater. Process. Technol. 153-154 (2004) 666.
18. B. J. Hopper, G. Byrne, and S. Galligan: J. Mater. Process. Technol. 123 (2002) 107.
19. K. H. Park, H. J. Kim, O. M. Chang, and H. D. Jeong: J. Mater. Process. Technol. 187-188 (2007) 73.
20. http://www.talyer-hobson.com
21. J. Luo and D. Dornfeld: IEEE Trans. Semicond. Manuf. 16 (2003) 45.
22. M. Bielmann, U. Mahaja, and R. K. Singh: Electrochem. Solid-State Lett. 2 (1999) 401.
23. A. A. Yasseen, N. J. Mourlas, and M. Mehregany: J. Electrochem. Soc. 144 (1997) 237.
24. J. Luo and D. Dornfeld: IEEE Trans. Semicond. Manuf. 14 (2001) 112.
25. D. Wang, J. Lee, K. Holland, T. Bibby, S. Beaudoin, and T. Cale: J. Electrochem. Soc. 144 (1997) 1121.
26. W. J. Lee and C. H. Ko: Thin Solid Films 489 (2005) 145.
27. H. Kim and H. Jeong: J. Electron. Mater. 33 (2004) 53.
28. E. Taran, B. C. Donose, I. U. Vakarelski, and K. Higashitani: J. Colloid Interface Sci. 297 (2006) 199.
29. W. T. Tseng, Y. T. Hsieh, C. F. Lin, M. S. Tsai, and M. S. Feng: J. Electrochem. Soc. 144 (1997) 1100.
30. G. Socrates: Infrared Characteristic Group Frequencies (Wiley, New York, 1994) 2nd ed., p. 62.
31. H. Cui, I. B. Bhat, S. P. Murarka, H. Lu, W. Li, W. J. Hsia, and W. Catabay: J. Electrochem. Soc. 147 (2000) 3816.
32. L. Cook: J. Non-Cryst. Solids 120 (1990) 152.