Effects of pad properties on material removal in chemical mechanical polishing

Journal of Materials Processing Technology

Volumn 187-188, Issue , 2007, Pages 73-76

  Park, K H ^a   Kim, H J ^a   Chang, O M ^a   Jeong, H D ^a  

^a Pusan National University   (South Korea)

Author keywords

Conditioning process; Reduced peak height (Rpk); Surface roughness

Indexed keywords

REMOVAL; SURFACE ROUGHNESS; THIN FILMS;

CONDITIONING PROCESS; REDUCED PEAK HEIGHT; REMOVAL RATE;

CHEMICAL MECHANICAL POLISHING;

EID: 33947115858     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2006.11.216     Document Type: Article

References (5)

1. Li S.H., and Miller R.O. Chemical Mechanical Polishing in Silicon, Semiconductors and Semimetals vol. 63 (2000), Academic Press
2. Lawing S. Pad conditioning effects in chemical mechanical polishing. China 2004 SEMI Technology Symposium. China (2004)
3. McGrath J., and Davis C. Polishing pad surface characterization in chemical mechanical planarization. J. Mater. Process. Technol. 153-154 (2004) 666-673
4. H. Kim, A study on the interfacial characteristics and its effect on material removal in CMP, Ph.D. Thesis, Pusan National University, Korea, 2003.
5. http://www.talyor-hobson.com