Chemical mechanical polishing of low dielectric constant oxide films deposited using flowfill chemical vapor deposition technology

Journal of the Electrochemical Society

Volumn 147, Issue 10, 2000, Pages 3816-3819

  Cui, Hao ^a   Bhat, Ishwara B ^a   Murarka, Shyam P ^a   Lu, Hongqiang ^a   Li, Weidan ^a   Hsia, Wei Jen ^a   Catabay, Wilbur ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BONDS; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; ELECTRIC VARIABLES MEASUREMENT; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PERMITTIVITY; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE ROUGHNESS; THIN FILMS;

CAPACITANCE VOLTAGE MEASUREMENTS; FLOWFILL CHEMICAL VAPOR DEPOSITION; LOW DIELECTRIC CONSTANT OXIDE FILMS; METHYL GROUPS; SPECTROSCOPIC ELLIPSOMETRY;

SILICA;

EID: 0034296386     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393978     Document Type: Article

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