Erratum to: "Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions" [Microelect. Eng. 83 (2006) 362-370] (DOI:10.1016/j.mee.2005.10.004);Temperature effects of pad conditioning process on oxide CMP: Polishing pad, slurry characteristics, and surface reactions

Microelectronic Engineering

Volumn 83, Issue 2, 2006, Pages 362-370

  Kim, Nam Hoon ^a   Seo, Yong Jin ^b   Lee, Woo Sun ^a  

^a Chosun University   (South Korea)

^b Daebul University   (South Korea)

Author keywords

Chemical mechanical polishing; Pad conditioning; Removal rate; Slurry characteristics; Surface morphology; X ray photoelectron spectroscopy

Indexed keywords

ELECTRIC CONDUCTIVITY; OXIDES; POLISHING; SILICON COMPOUNDS; SLURRIES; SURFACE PROPERTIES; SURFACE REACTIONS; THERMAL EFFECTS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS; PAD CONDITIONING; REMOVAL RATE; SLURRY CHARACTERISTICS;

CHEMICAL MECHANICAL POLISHING;

EID: 32044459049     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.02.002     Document Type: Erratum

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