Self-assembled GaN nano-column grown on Si(111) substrate using Au+Ga alloy seeding method by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2571-2573

  Shim, Byung Young ^a   Ko, Eun A ^a   Song, Jae Chul ^a   Kang, Dong Hun ^a   Kim, Dong Wook ^a   Lee, In Hwan ^a   Kannappan, Santhakumar ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Au catalyst; GaN on Si(111); MOCVD; Nano column; OEIC

Indexed keywords

FILM THICKNESS; INTEGRATED OPTOELECTRONICS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SELF ASSEMBLY; SILICON ALLOYS;

AU CATALYSTS; GAN ON SI(111); GROWTH PARAMETERS; NANO-COLUMN ARRAYS;

GALLIUM NITRIDE;

EID: 34547919666     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2571     Document Type: Article

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