The excitonic bandgap of GaN: Dependence on substrate

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 239-241

  Monemar, B ^a   Bergman, J P ^a   Buyanova, I A ^a   Amano, H ^b   Akasaki, I ^b   Detchprohm, T ^c   Hiramatsu, K ^c   Sawaki, N ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EXCITONS; PHOTOLUMINESCENCE; SAPPHIRE; SUBSTRATES; THERMAL EFFECTS;

GALLIUM NITRIDE LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0040086701     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00208-0     Document Type: Article

References (12)

1. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
2. B. Monemar, H. P. Bergman, T. Lundström, C. I. Harris, H. Amano, I. Akasaki, T. Detchprohm, K. Hiramatsu and N. Sawaki. Solid-St. Electron. 41, 181 (1997).
3. H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietrasko and T. D. Moustakas, J. Appl. Phys. 76, 2429 (1994).
4. W. Shan, T. J. Schmidt, X. H. Yang, S. J. Hwang, J. J. Song and B. Goldenberg, Appl. Phys. Lett. 66, 985 (1995).
5. A. S. Zubrilov, V. I. Nikolaev, D. V. Tsvetkov, V. A. Dmitriev, K. G. Irvine, J. A. Edmond and C. H. Carter Jr, Appl. Phys. Lett. 67, 533 (1995).
6. B. Monemar, Phys. Rev. B 10, 676 (1974).
7. M. Ilegems, R. Dingle and R. A. Logan, J. Appl. Phys. 43, 3797 (1972).
8. J. I. Pankove, J. Lumin. 7, 114 (1973).
9. H. Amano, K. Hiramatsu and I. Akasaki, Jpn. J. Appl. Phys. 27, L1384 (1988).
10. K. Naniwae, S. Itoh, H. Amano, K. Itoh, K. Hiramatsu and I. Akasaki, J. Crystal Growth. 99, 381 (1990).
11. T. Strite and H. Morkoc, J. Vac. Sci. Technol. B10, 1237 (1992).
12. A. Gavini and M. Cardona, Phys. Rev. B 1, 672 (1970).