Overestimation of the field-effect mobility via transconductance measurements and the origin of the output/transfer characteristic discrepancy in organic field-effect transistors

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Reese, Colin ^a   Bao, Zhenan ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATERIALS PROPERTIES; SEMICONDUCTING INDIUM; TRANSISTORS;

CLOSED-FORM ANALYSIS; DIMENSIONLESS VARIABLES; EFFECTIVE MOBILITIES; ELECTRICAL CHARACTERISTICS; ELECTRONIC MATERIALS; FIELD-EFFECT MOBILITIES; GATE VOLTAGES; INTRINSIC PROPERTIES; MOBILITY ESTIMATIONS; ORGANIC FIELD-EFFECT TRANSISTORS; PARASITIC RESISTANCES; RATIONAL DESIGNS; SOFT MATERIALS; STABLE FIELDS; TEST ALGORITHMS; TRANSFER CURVES;

FIELD EFFECT TRANSISTORS;

EID: 59349106837     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3029587     Document Type: Article

References (38)

1. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/1521-4095(20020116)14:299::AID-ADMA993.0.CO;2-9 14, 99 (2002).
2. C. Reese, M. Roberts, M. -M. Ling, and Z. Bao, Mater. Today 1369-7021 10.1016/S1369-7021(04)00398-0 7, 20 (2004).
3. S. M. Sze, Semiconductor Devices, Physics and Technology, 2nd ed. (Wiley, New York, 2002), p. viii.
4. G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bourguiga, and M. Hajlaoui, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/(SICI)1521-4095(199808)10:12923:: AID-ADMA9233.0.CO;2-W 10, 923 (1998).
5. A. Salleo, T. W. Chen, A. R. Völkel, Y. Wu, P. Liu, B. S. Ong, and R. A. Street, Phys. Rev. B 0163-1829 10.1103/PhysRevB.70.115311 70, 115311 (2004).
6. M. Breban, D. B. Romero, S. Mezhenny, V. W. Ballarotto, and E. D. Williams, Appl. Phys. Lett. 0003-6951 10.1063/1.2131183 87, 203503 (2005).
7. G. Horowitz, P. Lang, M. Mottaghi, and H. Aubin, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200305122 14, 1069 (2004).
8. C. Reese and Z. Bao (in press).
9. V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, T. Someya, M. E. Gershenson, and J. A. Rogers, Science 0036-8075 10.1126/science.1094196 303, 1644 (2004).
10. R. W. I. de Boer, M. E. Gershenson, A. F. Morpurgo, and V. Poszorov, Phys. Status Solidi A 0031-8965 10.1002/pssa.200404336 201, 1302 (2004).
11. I. N. Hulea, S. Russo, A. Molinari, and A. F. Morpurgo, Appl. Phys. Lett. 0003-6951 10.1063/1.2185632 88, 113512 (2006).
12. J. Zaumseil, K. W. Baldwin, and J. A. Rogers, J. Appl. Phys. 0021-8979 10.1063/1.1568157 93, 6117 (2003).
13. K. P. Puntambekar, P. V. Pesavento, and C. D. Frisbie, Appl. Phys. Lett. 0003-6951 10.1063/1.1637443 83, 5539 (2003).
14. P. V. Pesavento, R. J. Chesterfield, C. R. Newman, and C. D. Frisbie, J. Appl. Phys. 0021-8979 10.1063/1.1806533 96, 7312 (2004).
15. R. J. Chesterfield, J. C. McKeen, C. R. Newman, C. D. Frisbie, P. C. Ewbank, E. R. Mann, and L. L. Miller, J. Appl. Phys. 0021-8979 10.1063/1.1710729 95, 6396 (2004).
16. H. Klauk, G. Schmid, W. Radlik, W. Weber, L. S. Zhou, C. D. Sheraw, J. A. Nichols, and T. N. Jackson, Solid-State Electron. 0038-1101 10.1016/S0038-1101(02)00210-1 47, 297 (2003).
17. P. V. Pesavento, K. P. Puntambekar, C. D. Frisbie, C. M. John, and P. P. Ruden, J. Appl. Phys. 0021-8979 10.1063/1.2197033 99, 094504 (2006).
18. J. A. Nichols, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 0003-6951 10.1063/1.1611278 83, 2366 (2003).
19. M. J. Panzer and C. D. Frisbie, in Organic Field-Effect Transistors, edited by, Z. Bao, and, J. Locklin, (CRC, 2007), Vol. 128.
20. C. Reese and Z. Bao, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200701139 19, 4535 (2007).
21. R. A. Street and A. Salleo, Appl. Phys. Lett. 0003-6951 10.1063/1.1512950 81, 2887 (2002).
22. G. Horowitz, J. Mater. Res. 0884-2914 10.1557/JMR.2004.0266 19, 1946 (2004).
23. G. Horowitz and M. E. Hajlaoui, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/1521-4095(200007)12:141046::AID-ADMA10463.0.CO;2-W 12, 1046 (2000).
24. A. D. Meyertholen, Z. Q. Li, D. N. Basov, M. M. Fogler, M. C. Martin, G. M. Wang, A. S. Dhoot, D. Moses, and A. J. Heeger, Appl. Phys. Lett. 0003-6951 10.1063/1.2745223 90, 222108 (2007).
25. A. N. Aleshin, J. Y. Lee, S. W. Chu, J. S. Kim, and Y. W. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.1767282 84, 5383 (2004).
26. I. G. Hill, A. Rajagopal, A. Kahn, and Y. Hu, Appl. Phys. Lett. 0003-6951 10.1063/1.121940 73, 662 (1998).
27. A. R. Volkel, R. A. Street, and D. Knipp, Phys. Rev. B 0163-1829 10.1103/PhysRevB.66.195336 66, 195336 (2002).
28. D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.93.076601 93, 076601 (2004).
29. G. Horowitz, R. Hajlaoui, R. Bourguiga, and M. hajlaoui, Synth. Met. 0379-6779 10.1016/S0379-6779(98)00313-0 101, 401 (1999).
30. G. Horowitz, R. Hajlaoui, D. Fichou, and A. El Kassmi, J. Appl. Phys. 0021-8979 10.1063/1.369661 85, 3202 (1999).
31. M. Shur, Physics of Semiconductor Devices (Prentice-Hall, New Jersey, 1990).
32. S. E. Fritz, T. W. Kelley, and C. D. Frisbie, J. Phys. Chem. B 1089-5647 10.1021/jp044318f 109, 10574 (2005).
33. S. Steudel, V. S. De, J. S. De, J. Stijn De, J. Dimitri, V. Stijn, G. Jan, and H. Paul, Appl. Phys. Lett. 0003-6951 10.1063/1.1815042 85, 4400 (2004).
34. C. Goldmann, D. J. Gundlach, and B. Batlogg, Appl. Phys. Lett. 88, (2006). 0021-8979
35. C. Goldmann, C. Krellner, K. P. Pernstich, S. Haas, D. J. Gundlach, and B. Batlogg, J. Appl. Phys. 0021-8979 10.1063/1.2170421 99, 034507 (2006).
36. J. Takeya, M. Yamagishi, Y. Tominari, R. Hirahara, Y. Nakazawa, T. Nishikawa, T. Kawase, T. Shimoda, and S. Ogawa, Appl. Phys. Lett. 0003-6951 10.1063/1.2711393 90, 102120 (2007).
37. J. Takeya, J. Kato, K. Hara, M. Yamagishi, R. Hirahara, K. Nakazawa, S. Ikehata, K. Tsukagosh, Y. Aoyagi, T. Takenobu, and Y. Iwasa, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.98.196804 98, 196804 (2007).
38. M. Yamagishi, J. Takeya, Y. Tominari, Y. Nakazawa, T. Kuroda, S. Ikehata, M. Uno, T. Nishikawa, and T. Kawase, Appl. Phys. Lett. 0003-6951 10.1063/1.2736208 90, 182117 (2007).