Mobility studies of field-effect transistor structures based on anthracene single crystals

Applied Physics Letters

Volumn 84, Issue 26, 2004, Pages 5383-5385

  Aleshin, A N ^a,b   Lee, J Y ^a   Chu, S W ^a   Kim, J S ^a   Park, Y W ^a  

^a Seoul National University   (South Korea)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; ELECTRON BEAM LITHOGRAPHY; ENERGY GAP; GOLD; SILICON WAFERS; SINGLE CRYSTALS; THIN FILM TRANSISTORS;

ANTHRACENE SINGLE CRYSTALS; GOLD ELECTRODES; POLY(DIMETHYL SILAXAN) (PDMS); SPACE-CHARGE-LIMITED CURRENT (SCLC);

FIELD EFFECT TRANSISTORS;

EID: 3242729609     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1767282     Document Type: Article

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