Effects of hydrogen treatment on strain relaxation of SiGe epi-layer on Ge substrate

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 204-207

  Yamashita, Y ^a   Nakagawa, R ^a   Sakamoto, Y ^a   Ishiyama, T ^a   Kamiura, Y ^a  

^a OKAYAMA UNIVERSITY   (Japan)

Author keywords

Hydrogen; Relaxation of misfit strain; SiGe

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GERMANIUM COMPOUNDS; HEAT TREATMENT; THIN FILMS; VISCOELASTICITY;

DISLOCATION VELOCITY; EPITAXIAL FILMS; RELAXATION OF MISFIT STRAIN; SIGE;

SILICON COMPOUNDS;

EID: 33645229503     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.054     Document Type: Conference Paper

References (13)

1. M. Yoneta, Y. Kamiura, and F. Hashimoto J. Appl. Phys. 70 1991 1295
2. Y. Yamashita, F. Jyobe, Y. Kamiura, and K. Maeda Phys. Stat. Sol. (a) 171 1999 27
3. C.P. Ewels, S. Leoni, M.I. Heggie, P. Jemmer, E. Hernández, R. Jones, and P.R. Briddon Phys. Rev. Lett. 84 2000 690
4. K. Maeda, K. Suzuki, Y. Yamashita, and Y. Mera J. Phys. Condens. Matter. 12 2000 10079
5. T. Akane, H. Okumura, J. Tanaka, and S. Matsumoto Thin Solid Films 294 1997 153
6. H. Okumura, T. Akane, and S. Matsumoto Appl. Surf. Sci. 125 1998 125
7. K. Prabhakarana, T. Ogino, R. Hull, J.C. Bean, and L.J. Peticolas Surf. Sci. 316 1994 L1031
8. Y. Kamiura, M. Kaneshiro, J. Tamura, T. Ishiyama, Y. Yamashita, T. Mitani, and T. Mukai Jpn. J. Appl. Phys. 44 2005 L926
9. N. Fukata, S. Sasaki, K. Murakami, K. Ishioka, K.G. Nakamura, M. Kitajima, S. Fujimura, J. Kikuchi, and H. Haneda Phys. Rev. B 56 1997 6642
10. S.J. Pearton, J.W. Corbett, and M. Stavola Hydrogen in Crystalline Semiconductors 1991 Springer Berlin pp.98-99
11. S. Muto, S. Takeda, and M. Hirata Mater. Sci. Forum 143-147 1994 897
12. M. Hiller, E.V. Lavrov, and J. Weber Phys. Rev. B 71 2005 045208
13. A.J. Pitera, and E.A. Fitzgerald J. Appl. Phys. 97 2005 104511