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Journal of Crystal Growth

Volumn 169, Issue 4, 1996, Pages 621-624

Two-step growth of InP on GaAs substrates by metalorganic vapor phase epitaxy

(6) Takano, Y a Sasaki, T a Nagaki, Y a Kuwahara, K a Fuke, S a Imai, T b

a SHIZUOKA UNIVERSITY (Japan)

b MEISEI UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

TWO STEP GROWTH; X RAY ROCKING CURVE;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030566499 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00468-X Document Type: Article

Times cited : (29)

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